A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer

摘要

This paper presents an analytical expression of the breakdown voltage of a high voltage implanted RESURF p-LDMOS device which uses the n+ buried layer as an effective device substrate. In this model, the doping profile of the buried layer is considered and discussed. The implant dose for the drift region to implement the RESURF principle is also described by this model. Results calculated from this model are verified by experimental values.